
Minimum Read to precharge (DDR3
only)
Minimum time from write to
PRECHARGE
Minimum time from write to read.
Read to write delay (valid values: 1
DELAY_WRITE_TO_WRITE_DIFF_BANK
Minimum delay from write to write
(different ranks)
DELAY_WRITE_TO_READ_DIFF_BANK
Minimum delay from write to read
(different ranks)
DELAY_READ_TO_READ_DIFF_BANK
Minimum delay from read to read
(different ranks)
DELAY_ADDITIVE_DDR3_LATENCY
Additive latency value (DDR2)
DELAY_LOADMODE_TO_ACTIVATE 3’h6 clock cycles
Minimum LOADMODE to ACTIVATE
command
Minimum LOADMODE to ANY
DELAY_SELF_REFRESH_TO_NON_DLL_CMD
Minimum time from self refresh to non-
DLL command
DELAY_SELF_REFRESH_TO_NON_READ_CMD
Minimum time from self refresh to non-
read command
DELAY_RESET_HIGH_TO_CLK_HIGH
Minimum delay from memory reset
high to cke hig
10-65535 refresh time
interval / tCK
Refresh period. This is the number of
clock cycles between refresh commands.
Initialization delay after reset
5: 10 column bits
6: 11 column bits
2: 13 row bits
3: 14 row bits
4: 15 row bits
0: 2 bank bits
0: UDimm
bits, one per DQ. ODT
On die termination selection for reads
bits, one per DQ. ODT
On die termination selection for reads
bits, one per DQ. ODT
On die termination selection for reads
bits, one per DQ. ODT
On die termination selection for reads
bits, one per DQ. ODT
On die termination selection for reads
bits, one per DQ. ODT
On die termination selection for reads
bits, one per DQ. ODT
On die termination selection for reads
Each bank contains 8
bits, one per DQ. ODT
On die termination selection for reads
on cs7
12 UG031, Nov 18, 2014
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